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NR 264.05 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
subch. I of ch. NR 264 Subchapter I — Semiconductor Subcategory
NR 264.10 NR 264.10  Applicability; description of the semiconductor subcategory. This subchapter applies to the discharge of pollutants to waters of the state and the introduction of pollutants into POTWs from all process operations, beginning with the use of crystal wafers, which lead to or are associated with the manufacture of semiconductors, except sputtering, vapor deposition, and electroplating.
NR 264.10 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.11 NR 264.11  Specialized definitions. The following definitions apply to the terms used in this subchapter:
NR 264.11(1) (1) “Semiconductor” means a solid state electrical device which performs functions such as information processing and display, power handling, and interconversion between light energy and electrical energy.
NR 264.11(2) (2) “TTO” means the sum of the concentrations of each of the following toxic organic compounds which is found in the discharge at a concentration greater than 10 micrograms per liter: - See PDF for table PDF
NR 264.11 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.12 NR 264.12  Effluent limitations representing the degree of effluent reduction attainable by the application of the best practicable control technology currently available. Except as provided in 40 CFR 125.30 to 125.32, any existing point source subject to this subchapter shall achieve the following effluent limitations representing the degree of effluent reduction attainable by application of BPT: - See PDF for table PDF
NR 264.12 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.13 NR 264.13  Effluent limitations representing the degree of effluent reduction attainable by the application of the best available technology economically achievable. Except as provided in 40 CFR 125.30 to 125.32, any existing point source subject to this subchapter shall achieve the following effluent limitations representing the degree of effluent reduction attainable by application of BAT: - See PDF for table PDF
NR 264.13 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.14 NR 264.14  New source performance standards. Any new source subject to this subchapter shall achieve the following NSPS: - See PDF for table PDF
NR 264.14 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.15 NR 264.15  Pretreatment standards for existing sources. Except as provided in ss. NR 211.13 and 211.14, any existing source subject to this subchapter which introduces pollutants into a POTW shall comply with ch. NR 211 and the TTO concentration in the discharge may not exceed 1.37 milligrams per liter for any one day.
NR 264.15 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.17 NR 264.17 Effluent limitations representing the degree of effluent reduction attainable by the application of the best conventional pollutant control technology. Except as provided in 40 CFR 125.30 to 125.32, any existing point source subject to this subchapter shall achieve a pH within the range of 6.0 to 9.0 at all times.
NR 264.17 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
subch. II of ch. NR 264 Subchapter II — Electronic Crystals Subcategory
NR 264.20 NR 264.20  Applicability; description of the electronic crystals subcategory. This subchapter applies to the discharge of pollutants to waters of the state and the introduction of pollutants into POTWs resulting from the growing of crystals or the production of crystal wafers for use in the manufacture of electronic devices.
NR 264.20 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.21 NR 264.21  Specialized definitions. The following definitions apply to the terms used in this subchapter:
NR 264.21(1) (1) “Electronic crystals” means crystals or crystalline materials, such as crystals comprised of quartz, ceramic silicon, gallium arsenide, and indium arsenide, which, because of their unique structural and electrical properties, are used in electronic devices.
NR 264.21(2) (2) “TTO” means the sum of the concentrations of each of the following toxic organic compounds which is found in the discharge at a concentration greater than 10 micrograms per liter: - See PDF for table PDF
NR 264.21 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.22 NR 264.22  Effluent limitations representing the degree of effluent reduction attainable by the application of the best practicable control technology currently available. Except as provided in 40 CFR 125.30 to 125.32, any existing point source subject to this subchapter shall achieve the following effluent limitations representing the degree of effluent reduction attainable by application of BPT: - See PDF for table PDF
NR 264.22 Note (1) The arsenic limitation only applies to manufacturers of gallium or indium arsenide crystals.
NR 264.22 Note (2) Within the range of 6.0 to 9.0 at all times.
NR 264.22 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.23 NR 264.23  Effluent limitations representing the degree of effluent reduction attainable by the application of the best available technology economically achievable. Except as provided in 40 CFR 125.30 to 125.32, any existing point source subject to this subchapter shall achieve the following effluent limitations representing the degree of effluent reduction attainable by application of BAT: - See PDF for table PDF
NR 264.23 Note (1) The arsenic limitation only applies to manufacturers of gallium or indium arsenide crystals.
NR 264.23 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.24 NR 264.24  New source performance standards. Any new source subject to this subchapter shall achieve the standards set forth in s. NR 264.23.
NR 264.24 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.25 NR 264.25  Pretreatment standards for existing sources. Except as provided in ss. NR 211.13 and 211.14, any existing source subject to this subchapter which introduces pollutants into a POTW shall comply with ch. NR 211 and achieve the following PSES: - See PDF for table PDF
NR 264.25 Note (1) The arsenic limitation only applies to manufacturers of gallium or indium arsenide crystals.
NR 264.25 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.26 NR 264.26 Pretreatment standards for new sources. Except as provided in s. NR 211.13, any new source subject to this subchapter which introduces pollutants into a POTW shall comply with ch. NR 211 and comply with the standards set forth in s. NR 264.25.
NR 264.26 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.27 NR 264.27  Effluent limitations representing the degree of effluent reduction attainable by the application of the best conventional pollutant control technology. Except as provided in 40 CFR 125.30 to 125.32, any existing point source subject to this subchapter shall achieve the following effluent limitations representing the degree of effluent reduction attainable by application of BCT: - See PDF for table PDF
NR 264.27 Note (1) Within the range of 6.0 to 9.0 at all times.
NR 264.27 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
subch. III of ch. NR 264 Subchapter III — Cathode Ray Tube Subcategory
NR 264.30 NR 264.30  Applicability; description of the cathode ray tube subcategory. This subchapter applies to the discharge of pollutants to waters of the state and the introduction of pollutants into POTWs from the manufacture of cathode ray tubes. This subchapter does not apply to the manufacture of receiving or transmitting tubes.
NR 264.30 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.31 NR 264.31  Specialized definitions. The following definitions apply to the terms used in this subchapter:
NR 264.31(1) (1) “Cathode ray tube” means an electronic device in which electrons focus through a vacuum to generate a controlled image on a luminescent surface.
NR 264.31(2) (2) “TTO” means the sum of the concentrations of each of the following toxic organic compounds which is found in the discharge at a concentration greater than 10 micrograms per liter.
1, 1, 1 chloroform
trichloroethane
methylene chloride
bis (2-ethylhexyl) phthalate
toluene
trichloroethylene
NR 264.31 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.32 NR 264.32  New source performance standards. Any new source subject to this subchapter shall achieve the following NSPS: - See PDF for table PDF
NR 264.32 Note (1) Within the range of 6.0 to 9.0 at all times.
NR 264.32 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.33 NR 264.33  Pretreatment standards for existing sources. Except as provided in ss. NR 211.13 and 211.14, any existing source subject to this subchapter which introduces pollutants into a POTW shall comply with ch. NR 211 and achieve the following PSES: - See PDF for table PDF
NR 264.33 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.34 NR 264.34  Pretreatment standards for new sources. Except as provided in s. NR 211.13, any new source subject to this subchapter which introduces pollutants into a POTW shall comply with ch. NR 211 and achieve the following PSNS: - See PDF for table PDF
NR 264.34 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
subch. IV of ch. NR 264 Subchapter IV — Luminescent Materials Subcategory
NR 264.40 NR 264.40  Applicability; description of the luminescent materials subcategory. This subchapter applies to the discharge of pollutants to waters of the state and the introduction of pollutants into POTWs resulting from the manufacture of materials, such as calcium halophosphate, yttrium oxide, zinc sulfide, and zinc-cadmium sulfide, which emit light upon excitation by energy sources such as photons, electrons, applied voltage, chemical reactions, or mechanical energy, and which are specifically used as coatings in fluorescent lamps and cathode ray tubes.
NR 264.40 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.41 NR 264.41  New source performance standards. Any new source subject to this subchapter shall achieve the following NSPS: - See PDF for table PDF
NR 264.41 Note (1) Within the range of 6.0 to 9.0 at all times.
NR 264.41 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.42 NR 264.42  Pretreatment standards for new sources. Except as provided in s. NR 211.13, any new source subject to this subchapter which introduces pollutants into a POTW shall comply with ch. NR 211 and achieve the following PSNS: - See PDF for table PDF
NR 264.42 History History: Cr. Register, May, 1990, No. 413, eff. 6-1-90.
NR 264.42 Note Note: The Wisconsin administrative code corresponds to the code of federal regulations as cross referenced in the following table: - See PDF for table PDF
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Published under s. 35.93, Stats. Updated on the first day of each month. Entire code is always current. The Register date on each page is the date the chapter was last published.